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vishay siliconix sia778dj new product document number: 65669 s10-0046-rev. a, 11-jan-10 www.vishay.com 1 n-channel 12 v and 20 v (d-s) mosfets features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfets ? new thermally enhanced powerpak ? sc-70 package - small footprint area - low on-resistance ? typical esd performance for channel 2: 2800 v ? compliant to rohs directive 2002/95/ec applications ? n-channel level shift load switch for portable devices - for 0 v to 8 v power lines notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. see solder profile ( www.vishay.com/ppg?73257 ). the powerpak sc-70 is a leadless package. t he end of the lead terminal is exposed copper (not plated) as a result of the singulat ion process in manufacturing. a solder fi llet at the exposed copper tip cannot be guara nteed and is not required to ensure adequate bottom side solder interconnection. e. rework conditions: manual solder ing with a soldering iron is not recommended for leadless components. f. maximum under steady state conditions for channel 1 and channel 2 is 110 c/w. product summary v ds (v) r ds(on) ( )i d (a) q g (typ.) channel 1 12 0.029 at v gs = 4.5 v 4.5 a 5.6 nc 0.034 at v gs = 2.5 v 4.5 a 0.044 at v gs = 1.8 v 4.5 a 0.065 at v gs = 1.5 v 4.5 a channel 2 20 0.225 at v gs = - 4.5 v 1.5 a 1.1 nc 0.270 at v gs = - 2.5 v 1.5 a 0.345 at v gs = - 1.8 v 1.5 a 0.960 at v gs = - 1.5 v 0.5 a orderin g information: sia77 8 dj-t1-ge3 (lead (p b )-free and halogen-free) n -channel 1 mosfet g 1 d 1 s 1 n -channel 2 mosfet markin g code x x x c g x lot tracea b ility and date code part # code s 1 d 1 g 2 s 2 g 1 d 2 1 6 5 4 2 3 2.05 mm 2.05 mm powerpak sc-70-6 dual d 1 d 2 d 2 s 2 g 2 200 absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol channel 1 channel 2 unit drain-source voltage v ds 12 20 v gate-source voltage v gs 8 6 continuous drain current (t j = 150 c) t c = 25 c i d 4.5 a 1.5 a a t c = 70 c 4.5 a 1.5 a t a = 25 c 4.5 a, b, c 1.5 b, c t a = 70 c 4.5 a, b, c 1.5 b, c pulsed drain current i dm 20 4 source drain current diode current t c = 25 c i s 4.5 a 1.5 a t a = 25 c 1.6 b, c 1.5 b, c maximum power dissipation t c = 25 c p d 6.5 5 w t c = 70 c 53.2 t a = 25 c 1.9 b, c 1.9 b, c t a = 70 c 1.2 b, c 1.2 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol channel 1 channel 2 unit typ. max. typ. max. maximum junction-to-ambient b, f t 5 s r thja 52 65 52 65 c/w maximum junction-to-case (drain) steady state r thjc 12.5 16 20 25
www.vishay.com 2 document number: 65669 s10-0046-rev. a, 11-jan-10 vishay siliconix sia778dj new product notes: a. guaranteed by design, not s ubject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 %. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a ch-1 12 v v gs = 0 v, i d = 250 a ch-2 20 v ds temperature coefficient v ds /t j i d = 250 a ch-1 12 mv/c i d = 250 a ch-2 21 v gs(th) temperature coefficient v gs(th) /t j i d = 250 a ch-1 - 2.5 i d = 250 a ch-2 - 2.3 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a ch-1 0.4 1 v v ds = v gs , i d = 250 a ch-2 0.4 1 gate-body leakage i gss v ds = 0 v, v gs = 8 v ch-1 100 na v ds = 0 v, v gs = 6 v ch-2 1 ma zero gate voltage drain current i dss v ds = 12 v, v gs = 0 v ch-1 1 a v ds = 20 v, v gs = 0 v ch-2 1 v ds = 12 v, v gs = 0 v, t j = 55 c ch-1 10 v ds = 20 v, v gs = 0 v, t j = 55 c ch-2 10 on-state drain current b i d(on) v ds 5 v, v gs = 4.5 v ch-1 15 a v ds 5 v, v gs = 4.5 v ch-2 4 drain-source on-state resistance b r ds(on) v gs = 4.5 v, i d = 5 a ch-1 0.024 0.029 v gs = 4.5 v, i d = 1.6 a ch-2 0.183 0.225 v gs = 2.5 v, i d = 4.6 a ch-1 0.028 0.034 v gs = 2.5 v, i d = 1.5 a ch-2 0.220 0.270 v gs = 1.8 v, i d = 4.1 a ch-1 0.032 0.044 v gs = 1.8 v, i d = 1.3 a ch-2 0.275 0.345 v gs = 1.5 v, i d = 2 a ch-1 0.042 0.065 v gs = 1.5 v, i d = 0.3 a ch-2 0.320 0.960 forward transconductance b g fs v ds = 6 v, i d = 5 a ch-1 21 s v ds = 10 v, i d = 1.6 a ch-2 3.5 dynamic a input capacitance c iss channel 1 v ds = 6 v, v gs = 0 v, f = 1 mhz ch-1 500 pf output capacitance c oss ch-1 160 reverse transfer capacitance c rss ch-1 100 total gate charge q g v ds = 6 v, v gs = 8 v, i d = 6.5 a ch-1 9.7 15 nc v ds = 10 v, v gs = 5 v, i d = 1.7 a ch-2 1.3 2.2 channel 1 v ds = 6 v, v gs = 4.5 v, i d = 6.5 a channel 2 v ds = 10 v, v gs = 4.5 v, i d = 1.7 a ch-1 5.6 8.5 ch-2 1.1 1.7 gate-source charge q gs ch-1 0.72 ch-2 0.2 gate-drain charge q gd ch-1 0.74 ch-2 0.1 gate resistance r g f = 1 mhz ch-1 0.7 3.5 7 ch-2 40 200 400
document number: 65669 s10-0046-rev. a, 11-jan-10 www.vishay.com 3 vishay siliconix sia778dj new product notes: a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 %. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit dynamic a tu r n - o n d e l ay t i m e t d(on) channel 1 v dd = 6 v, r l = 1.2 i d ? 5.2 a, v gen = 4.5 v, r g = 1 channel 2 v dd = 10 v, r l = 7.7 i d ? 1.3 a, v gen = 4.5 v, r g = 1 ch-1 10 15 ns ch-2 20 30 rise time t r ch-1 10 15 ch-2 12 20 turn-off delay time t d(off) ch-1 22 30 ch-2 70 105 fall time t f ch-1 10 15 ch-2 20 30 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c ch-1 4.5 a ch-2 1.5 pulse diode forward current a i sm ch-1 20 ch-2 4 body diode voltage v sd i s = 5.2 a, v gs = 0 v ch-1 0.85 1.2 v i s = 1.3 a, v gs = 0 v ch-2 0.9 1.2 body diode reverse recovery time t rr channel 1 i f = 5.2 a, di//dt = 100 a/s, t j = 25 c channel 2 i f = 1.3 a, di/dt = 100 a/s, t j = 25 c ch-1 20 40 ns ch-2 50 75 body diode reverse recovery charge q rr ch-1 5 10 nc ch-2 30 45 reverse recovery fall time t a ch-1 8 ns ch-2 115 reverse recovery rise time t b ch-1 12 ch-2 35
www.vishay.com 4 document number: 65669 s10-0046-rev. a, 11-jan-10 vishay siliconix sia778dj new product channel 1 typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =5 v thr u 2 v v gs =1 v v gs =1.5 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0.00 0.02 0.04 0.06 0.0 8 0.10 0 5 10 15 20 v gs =2.5 v v gs =1.5 v v gs =1. 8v v gs =4.5 v - on-resistance ( ) r ds(on) i d - drain c u rrent (a) 0 2 4 6 8 04 8 12 i d =6.5a v ds =9.6 v v ds =3 v v ds =6 v - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs transfer characteristics capacitance on-resistance vs. junction temperature 0 1 2 3 4 5 0.0 0.3 0.6 0.9 1.2 1.5 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d c rss 0 200 400 600 8 00 036912 c iss c oss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs =1.5 v ;i d =2a v gs =4.5 v , 2.5 v ,1. 8v ;i d =5a t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on)
document number: 65669 s10-0046-rev. a, 11-jan-10 www.vishay.com 5 vishay siliconix sia778dj new product channel 1 typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 t j = 150 c t j = 25 c v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) t j - temperat u re (c) on-resistance vs. gate-to-source voltage single pulse power (junction-to-ambient) 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.0 8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 i d =2a;t j = 25 c i d =5a; t j = 25 c i d = 5 a; t j = 125 c i d =2a;t j = 125 c - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) 1000 100 1 0.001 0.01 0.1 10 po w er ( w ) p u lse (s) 20 10 5 15 0 safe operating area, junction-to-ambient 100 1 0.1 1 10 100 10 0.1 t a = 25 c single p u lse 100 s limited b yr ds(on) * b v dss limited 1ms 10 ms 100 ms, 1 s 10 s, dc v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d
www.vishay.com 6 document number: 65669 s10-0046-rev. a, 11-jan-10 vishay siliconix sia778dj new product channel 1 typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistanc e, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to deter mine the current rating, when this rating falls below the package limit. current derating* 0 3 6 9 12 15 0 25 50 75 100 125 150 package limited t c - case temperat u re (c) i d - drain c u rrent (a) power derating 0 2 4 6 8 25 50 75 100 125 150 t c - case temperat u re (c) po w er dissipation ( w )
document number: 65669 s10-0046-rev. a, 11-jan-10 www.vishay.com 7 vishay siliconix sia778dj new product channel 1 typical characteristics 25 c, unless otherwise noted normalized thermal transient impedance, junction-to-ambient 1 0.1 0.01 normalized ef fective t ransient thermal impedance 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 square wave pulse duration (s) single pulse 0.02 0.05 0.1 0.2 duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r th ja = 110 c/w 3. t jm - t a = p dm z th ja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-case 10 -3 10 -2 10 -1 10 -4 1 0.01 square wave pulse duration (s) normalized e f f ective t ransient thermal impedance duty cycle = 0.5 0.2 0.1 single pulse 0.02 0.05
www.vishay.com 8 document number: 65669 s10-0046-rev. a, 11-jan-10 vishay siliconix sia778dj new product channel 2 typical characteristics t a = 25 c, unless otherwise noted gate current vs. gate-to-source voltage output characteristics on-resistance vs. drain current 0 5 10 15 20 25 30 35 0246 8 v gs - gate-to-so u rce v oltage ( v ) - gate c u rrent (ma) i gss 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =5 v thr u 2 v v gs =1 v v gs =1.5 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs =1.5 v v gs =2.5 v v gs =1. 8v v gs =4.5 v - on-resistance ( ) r ds(on) i d - drain c u rrent (a) gate current vs. gate-to-source voltage transfer characteristics gate charge v gs - gate-to-so u rce v oltage ( v ) - gate c u rrent (a) i gss 10 -10 10 -9 10 - 8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 0246 8 t j = 150 c t j = 25 c 0.0 0.4 0. 8 1.2 1.6 2.0 0.0 0.5 1.0 1.5 2.0 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0 2 4 0.0 0.3 0.6 0.9 1.2 1.5 v ds =16 v i d =1.7a v ds =10 v - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs
document number: 65669 s10-0046-rev. a, 11-jan-10 www.vishay.com 9 vishay siliconix sia778dj new product channel 2 typical characteristics t a = 25 c, unless otherwise noted normalized on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage threshold voltage 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 - 50 - 25 0 25 50 75 100 125 150 v gs =1.5 v ;i d =0.4a v gs =4.5 v ,2.5 v ,1. 8v ;i d =1.6a t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) 0.0 0.2 0.4 0.6 0. 8 1.0 012345 t j = 25 c t j = 125 c i d =1.6a - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) 0.4 0.5 0.6 0.7 0. 8 0.9 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) t j - temperat u re (c) source-drain diode forward voltage single pulse power, junction-to-ambient safe operating area, junction-to-ambient 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 t j = 150 c t j = 25 c v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 0 2 4 6 8 po w er ( w ) time (s) 10 1000 0.1 0.01 0.001 100 1 10 0.1 0.1 1 10 1 t a = 25 c single p u lse 1ms 0.01 1s,10s 100 limited b yr ds(on)* 10 ms 100 ms v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d dc 100 s b v dss limited
www.vishay.com 10 document number: 65669 s10-0046-rev. a, 11-jan-10 vishay siliconix sia778dj new product channel 2 typical characteristics t a = 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistanc e, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to deter mine the current rating, when this rating falls below the package limit. current derating* 0 1 2 3 4 0 25 50 75 100 125 150 package limited t c - case temperat u re (c) i d - drain c u rrent (a) power derating 0.4 0.5 0.6 0.7 0. 8 0.9 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) t j - temperat u re (c)
document number: 65669 s10-0046-rev. a, 11-jan-10 www.vishay.com 11 vishay siliconix sia778dj new product channel 2 typical characteristics t a = 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65669 . normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja =110 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 single p u lse 0.02 0.05 normalized thermal transient impedance, junction-to-case 1 0.1 d u ty cycle = 0.5 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 10 -2 1 10 -1 10 -4 0.02 single p u lse 0.1 0.2 0.05
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.

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